Molecular beam epitaxy of the magnetic kagome metal FeSn on LaAlO3 (111)
arXiv:2001.01820 · doi:10.1063/5.0001909
Abstract
Materials with a layered Kagome lattice are expected to give rise to novel physics arising from band structures with topological properties, spin liquid behavior and the formation of skyrmions. Until now, most work on Kagome materials has been performed on bulk samples due to difficulties in thin film synthesis. Here, by using molecular beam epitaxy, layered Kagome-structured FeSn films are synthesized on (111) oriented LaAlO3 substrate. Both in-situ and ex-situ characterizations indicate these films are highly crystalline and c-axis oriented, with atomically smooth surfaces. However, the films grow as disconnected islands, with lateral dimensions on the micron scale. By patterning Pt electrodes using a focused electron beam, longitudinal and transverse resistance of single islands have been measured in magnetic fields. Our work opens a pathway for exploring mesoscale transport properties in thin films of Kagome materials and related devices.
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Cited by in corpus (6)
- Experimental evidence for Berry curvature multipoles in antiferromagnets
- Atomic Layer Epitaxy of Kagome Magnet FeSn and Sn-modulated Heterostructures
- Visualizing symmetry-breaking electronic orders in epitaxial Kagome magnet FeSn films
- Anomalous magnetoresistance in an antiferromagnetic Kagome semimetal heterostructures
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