Epitaxial antiperovskite/perovskite heterostructures for materials design

Abstract

We demonstrate fabrication of atomically sharp interfaces between nitride antiperovskite Mn${}_3$GaN and oxide perovskites (La${}_{0.3}$Sr${}_{0.7}$)(Al${}_{0.65}$Ta${}_{0.35}$)O${}_3$ (LSAT) and SrTiO${}_3$ as paradigms of nitride-antiperovskite/oxide-perovskite heterostructures. Using a combination of scanning transmission electron microscopy (STEM), atomic-resolution spectroscopic techniques, and first-principle calculations, we investigated the atomic-scale structure, composition, and boding at the interface. We show that the epitaxial growth between the antiperovskite and perovskite compounds is mediated by a coherent interfacial monolayer that connects the two anti-structures. We anticipate our results to be a major step for the development of functional antiperovskite/perovskite heterostructures opening to harness a combination of their functional properties including topological properties for ultra low power applications.

References in corpus (1)

• Survey of the class of isovalent antiperovskite alkaline earth-pnictide compounds