Plasmonic Ferroelectric Modulators

Abstract

Integrated ferroelectric plasmonic modulators featuring large bandwidths, broad optical operation range, resilience to high temperature and ultracompact footprint are introduced. Measurements show a modulation bandwidth of 70 GHz and a temperature stability up to 250°C. Mach-Zehnder interferometer modulators with 10-$\mu$m-long phase shifters were operated at 116 Gbit/s PAM-4 and 72 Gbit/s NRZ. Wide and open eye diagrams with extinction ratios beyond 15 dB were found. The fast and robust devices are apt to an employment in industrial environments.

References in corpus (3)

• Nanophotonic Lithium Niobate Electro-optic Modulators
• Active silicon integrated nanophotonics: ferroelectric BaTiO3 devices
• Coherent modulation up to 100 GBd 16QAM using silicon-organic hybrid (SOH) devices

Cited by in corpus (5)

• High-performance Coherent Optical Modulators based on Thin-film Lithium Niobate Platform
• A BaTiO3-Based Electro-Optic Pockels Modulator Monolithically Integrated on an Advanced Silicon Photonics Platform
• Barium Titanate and Lithium Niobate Permittivity and Pockels Coefficients from MHz to Sub-THz Frequencies
• Stoichiometric Control and Optical Properties of BaTiO3 Thin Films Grown by Hybrid MBE
• Electro-optic properties of ZrO2, HfO2 and LiNbO3 ferroelectric phases: A comprehensive and comparative study with density functional theory