Strongly Gapped Topological Surface States on Protected Surfaces of Antiferromagnetic MnBiTe and MnBiTe
arXiv:1910.13943
Abstract
The search for materials to support the Quantum Anomalous Hall Effect (QAHE) have recently centered on intrinsic magnetic topological insulators (MTIs) including MnBiTe or heterostructures made up of MnBiTe and BiTe. While MnBiTe is itself a MTI, most recent ARPES experiments indicate that the surface states on this material lack the mass gap that is expected from the magnetism-induced time-reversal symmetry breaking (TRSB), with the absence of this mass gap likely due to surface magnetic disorder. Here, utilizing small-spot ARPES scanned across the surfaces of MnBiTe and MnBiTe, we show the presence of large mass gaps (~ 100 meV scale) on both of these materials when the MnBiTe surfaces are buried below one layer of BiTe that apparently protects the magnetic order, but not when the MnBiTe surfaces are exposed at the surface or are buried below two BiTe layers. This makes both MnBiTe and MnBiTe excellent candidates for supporting the QAHE, especially if bulk devices can be fabricated with a single continuous BiTe layer at the surface.
17 pages, 4 figures
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Cited by in corpus (13)
- Layer Hall effect in a 2D topological Axion antiferromagnet
- Variety of magnetic topological phases in the (MnBiTe)(BiTe) family
- Magnetic topological insulator MnBi6Te10 with zero-field ferromagnetic state and gapped Dirac surface states
- Orbital Complexity in Intrinsic Magnetic Topological Insulators MnBiTe and MnBiTe
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