Influence of doping level on Brillouin oscillations in GaAs

Abstract

Time-domain Brillouin scattering has proved to be an unique tool for determining depth dependent material properties. Here, we show the influence of doping level in GaAs on Brillouin oscillations. Measurements were performed on intrinsic, n-type and p-type GaAs samples. The results show high sensitivity of the amplitude of Brillouin oscillations to the doping concentration. The theoretical calculations are in a good agreement with the experimental data. This work provides an insight into the specific dopant profiling as a function of depth.

References in corpus (4)

• Near-bandgap wavelength-dependent studies of long-lived traveling coherent longitudinal acoustic phonon oscillations in GaSb/GaAs systems
• Revealing sub-μm inhomogeneities and μm-scale texture in H2O ice at Megabar pressures via sound velocity measurements by time-domain Brillouin scattering
• Time-domain Brillouin scattering for the determination of laser-induced temperature gradients in liquids
• Energy dependent amplitude of Brillouin oscillations in GaP