Spin Hall magnetoresistance sensor using Au${}_x$Pt${}_{1-x}$ as the spin-orbit torque biasing layer

Abstract

We report on investigation of spin Hall magnetoresistance sensor based on NiFe/AuxPt1-x bilayers. Compared to NiFe/Pt, the NiFe/AuxPt1-x sensor exhibits a much lower power consumption (reduced by about 57%), due to 80% enhancement of spin-orbit torque efficiency of AuxPt1-x at an optimum composition of x = 0.19 as compared to pure Pt. The enhanced spin-orbit torque efficiency allows to increase the thickness of NiFe from 1.8 nm to 2.5 nm without significantly increasing the power consumption. We show that, by increasing the NiFe thickness, we were able to improve the working field range (0.86 Oe), operation temperature range (150 degree C) and detectivity (0.71 nT/sqrt(Hz) at 1 Hz) of the sensor, which is important for practical applications.

15 pages, 4 figures

References in corpus (5)

• Theory of spin Hall magnetoresistance
• On the origin of field-like spin-orbit torques in heavy metal-ferromagnet-oxide thin film heterostructures
• Enhancing spin-orbit torque by strong interfacial scattering from ultra-thin insertion layers
• Macro-spin Modeling and Experimental Study of Spin-orbit Torque Biased Magnetic Sensors
• Semitransparent anisotropic and spin Hall magnetoresistance sensor enabled by spin-orbit toque biasing

Cited by in corpus (2)

• Ultrafast spin-currents and charge conversion at 3d-5d interfaces probed by time-domain terahertz spectroscopy
• Eddy Current Testing of Metal Cracks Using Spin Hall Magnetoresistance Sensor and Machine Learning