MCDHF and RCI calculations of energy levels, lifetimes, and transition rates in Si III and Si IV

Abstract

We present extensive multiconfiguration Dirac-Hartree-Fock and relativistic configuration interaction calculations including 106 states in doubly ionized silicon (Si III) and 45 states in triply ionized silicon (Si iv), which are important for astrophysical determination of plasma properties in different objects. These calculations represents an important extension and improvement of earlier calculations especially for Si IV. The calculations are in good agreement with available experiments for excitation energies, transition properties, and lifetimes. Important deviations from the NIST-database for a selection of perturbed Rydberg series are discussed in detail.

arXiv comment2 figures

References in corpus (10)

• Present-day cosmic abundances. A comprehensive study of nearby early B-type stars and implications for stellar and Galactic evolution and interstellar dust models
• A cosmic abundance standard: chemical homogeneity of the solar neighbourhood and the ISM dust-phase composition
• An efficient approach for spin-angular integrations in atomic structure calculations
• Spectroscopic LSJ notation for atomic levels obtained from relativistic calculations
• Program to calculate pure angular momentum coefficients in jj-coupling
• The chemical composition of the Orion star forming region: I. Homogeneity of O and Si abundances in B-type stars
• Experimental and theoretical oscillator strengths of Mg I for accurate abundance analysis
• Abundances determined using Si II and Si III in B-type stars: evidence for stratification
• Differential O and Si Abundances in M33 Early B Supergiants
• Spectroscopy of the hot pulsating star Beta Cephei. Velocities and EWs from C,N,O and Si lines

Cited by in corpus (1)

• $\text{Ab initio}$ multiconfigurational calculations of experimentally significant energy levels and transition rates in Lr I $\left(Z=103\right)$