Borophosphene: a New Anisotropic Dirac Cone Monolayer with High Fermi Velocity and Unique Feature of Self-doping
arXiv:1909.00184 · doi:10.1021/acs.jpclett.9b02599
Abstract
Two-dimensional (2D) Dirac cone materials exhibit linear energy dispersion at the Fermi level, where the effective masses of carriers are very close to zero and the Fermi velocity is ultrahigh, only 2 ~ 3 orders of magnitude lower than the light velocity. Such the Dirac cone materials have great promise in high-performance electronic devices. Herein, we have employed the genetic algorithms methods combining with first-principles calculations to propose a new 2D anisotropic Dirac cone material, that is, orthorhombic boron phosphide (BP) monolayer named as borophosphene. Molecular dynamics simulation and phonon dispersion have been used to evaluate the dynamic and thermal stability of borophosphene. Because of the unique arrangements of B-B and P-P dimers, the mechanical and electronic properties are highly anisotropic. Of great interest is that the Dirac cone of the borophosphene is robust, independent of in-plane biaxial and uniaxial strains, and can also be observed in its one-dimensional (1D) zigzag nanoribbons and armchair nanotubes. The Fermi velocities are ~ 105 m/s, the same order of magnitude with that of graphene. By using a tight-binding model, the origin of the Dirac cone of borophosphene is analyzed. Moreover, a unique feature of self-doping can be induced by the in-plane biaxial and uniaxial strains of borophosphene and the Curvature effect of nanotubes, which is great beneficial to realizing high speed carriers (holes). Our results suggest that the borophosphene holds a great promise in high-performance electronic devices, which could promote the experimental and theoretical studies to further explore the potential applications of other 2D Dirac cone sheets.
References in corpus (16)
- The electronic properties of graphene
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Necessary and Sufficient Elastic Stability Conditions in Various Crystal Systems
- Two and one-dimensional honeycomb structures of silicon and germanium
- Monolayer honeycomb structures of group IV elements and III-V binary compounds
- Experimental Realization of Two-Dimensional Boron Sheets
- Molecular Doping of Graphene
- Elastic properties of hydrogenated graphene
- Phagraphene: A Low-energy Graphene Allotrope composed of 5-6-7 Carbon Rings with Distorted Dirac Cones
- Effects of Strain on Electronic Properties of Graphene
- Semimetallic Two-Dimensional Boron Allotrope with Massless Dirac Fermions
- Dirac fermions in borophene
- The response of mechanical and electronic properties of graphane to the elastic strain
- Atomic Hole Doping of Graphene
- Direct Evidence of Metallic Bands in a Monolayer Boron Sheet
- Ballistic charge transport in graphene and light propagation in periodic dielectric structures with metamaterials: a comparative study
Cited by in corpus (4)
- Ultrahigh stiffness and anisotropic Dirac cones in BeN4 and MgN4 monolayers: A first-principles study
- Borophosphene as a promising Dirac anode with large capacity and high-rate capability for sodium-ion batteries
- 2D Ladder polyborane: an ideal Dirac semimetal with a multi-feld-tunable band gap
- g-SiC6 Monolayer: A New Graphene-like Dirac Cone Material with a High Fermi Velocity