Controlled spin-torque driven domain wall motion using staggered magnetic nanowires
arXiv:1908.09304 · doi:10.1063/1.5135613
Abstract
The growing demand for storage, due to big data applications, cannot be met by hard disk drives. Domain wall (DW) memory devices such as racetrack memory offer an alternative route to achieve high capacity storage. In DW memory, control of domain wall positions and their motion using spin-transfer torque are important challenges. In this paper, we demonstrate controlled domain wall motion using spin-transfer torque in staggered magnetic nanowires. The devices, fabricated using electron-beam lithography, were tested using a magneto-optical Kerr microscopy and electrical transport measurements. The depinning current, pinning potential and thermal stability were found to depend on the device dimensions of the staggering nanowires. Thus, the proposed staggering configuration helps to fine-tune the properties of domain wall devices for memory applications.
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Cited by in corpus (3)
- High Frequency Domain Wall Oscillations in Ferromagnetic Nanowire with a Nanoscale Dzyaloshinskii Moriya Interaction (DMI) Region
- Initialization-Free Multistate Memristor: Synergy of Spin-Orbit Torque and Magnetic Fields
- Domain wall dynamics in stepped magnetic nanowire with perpendicular magnetic anisotropy