Mask-less Patterning of Gallium-irradiated Superconducting Silicon Using Focused Ion Beam

Abstract

A direct patterning technique of gallium-irradiated superconducting silicon has been established by focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line and square shaped patterns of gallium-irradiated silicon were carried out under self-field and magnetic field up to 7 T. Sharp superconducting transitions were observed in both patterns at temperature of 7 K. The line pattern exhibited a signature of higher onset temperature above 10 K. A critical dose amount to obtain the superconducting gallium-irradiated silicon was investigated by the fabrication of various samples with different doses. This technique can be used as a simple fabrication method for superconducting device.

References in corpus (7)

• Superconductivity in diamond
• Superconductivity in CVD Diamond Thin Film Well-Above Liquid Helium Temperature
• Focused-ion-beam-induced deposition of superconducting nanowires
• Josephson junctions and SQUIDs created by focused helium ion beam irradiation of YBa${}_2$Cu${}_3$O${}_7$
• Raising the superconducting $T_{\mathrm{c}}$ of gallium: in-situ characterization of the transformation of $\alpha$-Ga into $\beta$-Ga
• Ultradense Tailored Vortex Pinning Arrays in Superconducting YBa${}_2$Cu${}_3$O${}_{7-\delta }$ Thin Films Created by Focused He Ion Beam Irradiation for Fluxonics Applications
• Direct Observation of Microstructures on Superconducting Single Crystals of K${}_x$Fe${}_{2-y}$Se${}_2$