Tunable Giant Rashba-type Spin Splitting in PtSe${}_2$/MoSe${}_2$ Heterostructure

Abstract

We report a giant Rashba-type spin splitting in two-dimensional heterostructure PtSe${}_2$/MoSe${}_2$ with first-principles calculations. We obtain a large value of spin splitting energy 110 meV at the momentum offset $k_0$=0.23 Å${}^{-1}$ around $\mathrm{\Gamma }$ point, arising from the emerging strong interfacial spin-orbital coupling induced by the hybridization between PtSe${}_2$ and MoSe${}_2$. Moreover, we find that the band dispersion close to valence band maximum around $\Gamma$ point can be well approximated by the generalized Rashba Hamiltonian $H(k_{||})=-\frac{{\hslash }^2{k}_{||}^2}{2m}+c{k}_{||}+{\alpha }_R\vec{\sigma }\cdot ({\vec{k}}_{||}\times \vec{z})$. It is found that the generalized Rashba constant ${\eta }_R=c+{\alpha }_R$ in PtSe${}_2$/MoSe${}_2$ is as large as 1.3 eV$\cdot \text{A˚}$, and importantly ${\eta }_R$ can be effectively tuned by biaxial strain and external out-of-plane electrical field, presenting a potential application for the spin field-effect transistor. In addition, with the spin-valley physics at $\mathrm{K}/{\mathrm{K}}^{\prime }$ points in monolayer MoSe${}_2$, we propose a promising model for spin field-effect transistor with opto-valleytronic spin injection based on PtSe${}_2$/MoSe${}_2$ heterostructure.

Major changes have been made to the manuscript, including proposing a generalized Rashba Hamiltonian, modifying Fig. 3, changing the discussion of proposed SFET device, adding results to the supplementary materials, and so on

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Cited by in corpus (4)

• Tunable Electronic Properties and Large Rashba Splittings Found in Few-Layer Bi${}_2$Se${}_3$/PtSe${}_2$ Van der Waals Heterostructures
• Rashba Effect and Raman Spectra of Tl${}_2$O/PtS${}_2$ Heterostructure
• Coexistence of Rashba Effect and Spin-valley Coupling in TiX2 (X= Te, S and Se) based Heterostructures
• Fabry-Pérot interference in 2D low-density Rashba gas