Planar Hall Effect and Anisotropic Magnetoresistance in a polar-polar interface of LaVO${}_3$-KTaO${}_3$ with strong spin-orbit coupling

Abstract

Among the perovskite oxide family, KTaO${}_3$ (KTO) has recently attracted considerable interest as a possible system for the realization of the Rashba effect. In this work, we improvise a novel conducting interface by juxtaposing KTO with another insulator, namely LaVO${}_3$ (LVO) and report planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) measurements. This interface exhibits a signature of strong spin-orbit coupling. Our experimental observation of two fold AMR at low magnetic fields can be intuitively understood using a phenomenological theory for a Rashba spin-split system. At high fields ($\sim$8 T), we see a two fold to four fold transition in the AMR that could not be explained using only Rashba spin-split energy spectra. We speculate that it might be generated through an intricate process arising from the interplay between strong spin-orbit coupling, broken inversion symmetery, relativistic conduction electron and possible uncompensated localized vanadium spins.