Electron-phonon coupling and hot electron thermalization in titanium nitride

Abstract

We have studied the thermalization of hot carriers in both pristine and defective titanium nitride (TiN) using a two-temperature model. All parameters of this model, including the electron-phonon coupling parameter, were obtained from first-principles density-functional theory calculations. The virtual crystal approximation was used to describe defective systems. We find that thermalization of hot carriers occurs on much faster time scales than in gold as a consequence of the significantly stronger electron-phonon coupling in TiN. Specifically, the largest thermalization times, on the order of 200 femtoseconds, are found in TiN with nitrogen vacancies for electron temperatures around 4000 K.

arXiv comment22 pages, 6 figures

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Cited by in corpus (6)

• Broadband Ultrafast Dynamics of Refractory Metals: TiN and ZrN
• High-harmonic generation in metallic titanium nitride
• Colossal Atomic Force Response in van der Waals Materials Arising From Electronic Correlations
• Ab initio analysis for initial process of Joule heating in semiconductors
• Non-equilibrium scalar field dynamics starting from Fock states: Absence of thermalization in one dimensional phonons coupled to fermions
• Anisotropic hot carrier relaxation mediated by electron phonon scattering in TiN thin films