Robust magnetotransport in disordered ferromagnetic kagome layers with quantum anomalous Hall effect

Abstract

The magnetotransport properties of disordered ferromagnetic kagome layers are investigated numerically. We show that a large domain-wall magnetoresistance or negative magnetoresistance can be realized in kagome layered materials (e.g. Fe${}_3$Sn${}_2$, Co${}_3$Sn${}_2$S${}_2$, and Mn${}_3$Sn), which show the quantum anomalous Hall effect. The kagome layers show a strong magnetic anisotropy and a large magnetoresistance depending on their magnetic texture. These domain-wall magnetoresistances are expected to be robust against disorder and observed irrespective of the domain-wall thickness, in contrast to conventional domain-wall magnetoresistance in ferromagnetic metals.

arXiv comment4 pages, 6 figures, published version

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Cited by in corpus (4)

• Sign reversal of anomalous Hall conductivity and magnetoresistance in cubic non-collinear antiferromagnet Mn${}_3$Pt thin films
• Magnetic orderings from spin-orbit coupled electrons on kagome lattice
• Ferromagnetic-electrodes-induced Hall effect in topological Dirac semimetals
• Effective Tight-Binding Model of Compensated Ferrimagnetic Weyl Semimetal with Spontaneous Orbital Magnetization