Robust magnetotransport in disordered ferromagnetic kagome layers with quantum anomalous Hall effect
arXiv:1908.02727 · doi:10.1103/PhysRevB.100.161301
Abstract
The magnetotransport properties of disordered ferromagnetic kagome layers are investigated numerically. We show that a large domain-wall magnetoresistance or negative magnetoresistance can be realized in kagome layered materials (e.g. FeSn, CoSnS, and MnSn), which show the quantum anomalous Hall effect. The kagome layers show a strong magnetic anisotropy and a large magnetoresistance depending on their magnetic texture. These domain-wall magnetoresistances are expected to be robust against disorder and observed irrespective of the domain-wall thickness, in contrast to conventional domain-wall magnetoresistance in ferromagnetic metals.
4 pages, 6 figures, published version
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Cited by in corpus (4)
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- Effective Tight-Binding Model of Compensated Ferrimagnetic Weyl Semimetal with Spontaneous Orbital Magnetization