Enhancing electrical conductivity of room temperature deposited Sn-doped In$_2$O$_3$ thin films by hematite seed layers

Christian Lohaus; Céline Steinert; Getnet Deyu; Joachim Brötz; Wolfram Jaegermann; Andreas Klein

doi:10.1063/1.5022683

paper

Enhancing electrical conductivity of room temperature deposited Sn-doped In $_{2}$ O $_{3}$ thin films by hematite seed layers

arXiv:1907.02867 · doi:10.1063/1.5022683

Abstract

Hematite Fe $_{2}$ O $_{3}$ seed layers are shown to constitute a pathway to prepare highly conductive transparent tin-doped indium oxide (ITO) thin films by room temperature magnetron sputtering. Conductivities of up to $σ = 3300 S/cm$ are observed. The improved conductivity is not restricted to the interface but related to an enhanced crystallization of the films, which proceeds in the rhombohedral phase.

5 pages, 3 figures

Enhancing electrical conductivity of room temperature deposited Sn-doped In2​O3​ thin films by hematite seed layers

Abstract

Enhancing electrical conductivity of room temperature deposited Sn-doped In $_{2}$ O $_{3}$ thin films by hematite seed layers