A new type of charge-density-wave pinning in orthorhombic TaS${}_3$ crystals with quenching defects

Abstract

Diminishing in the concentration of quenching defects during thermocycling of orthorhombic TaS${}_3$ samples in the temperature range below the Peierls transition temperature $T<T_P$ is observed. It makes it possible to study the character of pinning of the charge density wave (CDW) by these defects. A number of fundamental differences from pinning by ordinary local pinning centers - impurities and point defects - have been found. We conclude that quenching defects are extended (non-local) objects (presumably, dislocations) that can diffuse from the crystal during low-temperature termocycling due to their strong interaction with the CDW, which is intrinsic for the Peierls conductors. The presence of these defects leads to a previously unknown non-local type of CDW pinning that acts on $T_P$ and the threshold field for the onset of the CDW sliding, $E_T$, differently in comparison with the local pinning centers.

LaTeX, 6 pages, 5 figures

References in corpus (1)

• Indium doping-induced change in the photoconduction spectra of o-TaS3