paper

Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe $_{2}$ few-layers on SiO $_{2}$ /Si

arXiv:1906.03014 · doi:10.1088/2053-1583/ab10f4

Abstract

Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric and magnetic doping of TMDC layers to develop basic devices such as p-n junctions or diluted magnetic semiconductors for spintronic applications are also an important field of investigation. Here, we have developed two different techniques to grow MoSe $_{2}$ mono- and multi-layers on SiO $_{2}$ /Si substrates over large areas. First, we co-deposited Mo and Se atoms on SiO $_{2}$ /Si by molecular beam epitaxy in the van der Waals regime to obtain continuous MoSe $_{2}$ monolayers over 1 cm $^{2}$ . To grow MoSe $_{2}$ multilayers, we then used the van der Waals solid phase epitaxy which consists in depositing an amorphous Se/Mo bilayer on top of a co-deposited MoSe $_{2}$ monolayer which serves as a van der Waals growth template. By annealing, we obtained continuous MoSe $_{2}$ multilayers over 1 cm $^{2}$ . Moreover, by inserting a thin layer of Mn in the stack, we could demonstrate the incorporation of up to 10 \% of Mn in MoSe $_{2}$ bilayers.

32 pages, 13 figures

Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe2​ few-layers on SiO2​/Si

Abstract

Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe $_{2}$ few-layers on SiO $_{2}$ /Si