Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations
arXiv:1905.09854 · doi:10.1088/1361-648X/ab5321
Abstract
Utilizing a material in thermoelectric applications requires a mechanical, thermal, and lattice stability as well a high figure of merit (ZT). In this work, we present the structural, electronic, magnetic, mechanical, thermodynamic, dynamic, and thermoelectric properties of CoFeYGe (Y = Ti, Cr) quaternary Heusler compounds using the density functional theory (DFT). The calculated mechanical properties and phonon dispersions reveal that the structures of these compounds are stable. Both CoFeCrGe and CoFeTiGe compounds show a ferromagnetic and ferrimagnetic half-metallic behavior with band gaps of 0.41 and 0.38 eV, respectively. The lattice thermal conductivity (\k{appa}L) exhibits low values that reach 3.01 W/(m.K) (3.47 W/(m.K)) for CoFeCrGe (CoFeTiGe) at 1100 K. The optical phonon modes have a large contribution of 60.2% (70.9 %) to \k{appa}L value for CoFeCrGe (CoFeTiGe). High ZT values of 0.71 and 0.65 were obtained for CoFeCrGe and CoFeTiGe, respectively. Based on our calculations, CoFeCrGe and CoFeTiGe combine both good spintronic and thermoelectric behaviors that may be used in spin injection applications.
17 pages, 5 figures, 3 tables
References in corpus (8)
- BoltzTraP. A code for calculating band-structure dependent quantities
- First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS
- How to calculate the degree of spin polarization in ferromagnets?
- Phonon Transport in Single-Layer Transition Metal Dichalcogenides: a First-Principles Study
- Ultralow Thermal Conductivity in Full-Heusler Semiconductors
- Low-Dimensional Transport and Large Thermoelectric Power Factors in Bulk Semiconductors by Band Engineering of Highly Directional Electronic States
- Electronic structure, magnetism and antisite disorder in CoFeCrGe and CoMnCrAl quaternary Heusler alloys
- Half-metallic, Co-based quaternary Heuslers for spintronics: defect- and pressure-induced transitions and properties