Limits of III-V nanowire growth based on particle dynamics

Abstract

Crystal growth of semiconductor nanowires from a liquid droplet depends on the stability of this droplet at the liquid-solid interface. By combining in-situ transmission electron microscopy with theoretical analysis of the surface energies involved, we show that truncation of the interface can increase the stability of the droplet, which in turn increases the range of parameters for which successful nanowire growth is possible. In addition to determining the limits of nanowire growth, this approach allows us to experimentally estimate relevant surface energies, such as the GaAs $\{11\bar{2}0\}$ facet.

References in corpus (4)

• Why does wurtzite form in nanowires of III-V zinc-blende semiconductors?
• In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth
• Independent control of nucleation and layer growth in nanowires
• Direct Observation of Interface and Nanoscale Compositional Modulation in Ternary III-As Heterostructure Nanowires

Cited by in corpus (1)

• Independent control of nucleation and layer growth in nanowires