Band alignment and scattering considerations for enhancing the thermoelectric power factor of complex materials: The case of Co-based half-Heuslers
arXiv:1905.07951 · doi:10.1103/PhysRevB.99.195202
Abstract
Half-Heuslers, an emerging thermoelectric material group, has complex bandstructures with multiple bands that can be aligned through band engineering approaches, giving us an opportunity to improve their power factor. In this work, going beyond the constant relaxation time approximation, we perform an investigation of the benefits of band alignment in improving the thermoelectric power factor under different density of states dependent scattering scenarios. As a test case we consider the Co-based p-type half-Heuslers TiCoSb, NbCoSn and ZrCoSb. First, using simplified effective mass models combined with Boltzmann transport, we investigate the conditions of band alignment that are beneficial to the thermoelectric power factor under three different carrier scattering scenarios: i) the usual constant relaxation time approximation, ii) intra-band scattering restricted to the current valley with the scattering rates proportional to the density of states as dictated by Fermi's Golden Rule, and iii) both intra- and inter-band scattering across all available valleys, with the rates determined by the total density of states at the relevant energies. We demonstrate that the band-alignment outcome differs significantly depending on the scattering details. Next, using the density functional theory calculated bandstructures of the half-Heuslers we study their power factor behavior under strain induced band alignment. We show that strain can improve the power factor of half-Heuslers, but the outcome heavily depends on the curvatures of the bands involved, the specifics of the carrier scattering mechanisms, and the initial band separation. Importantly, we also demonstrate that band alignment is not always beneficial to the power factor.
18 pages, 15 figures
References in corpus (6)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- BoltzTraP. A code for calculating band-structure dependent quantities
- First-Principles Simulation of Electron Mean-Free-Path Spectra and Thermoelectric Properties in Silicon
- Effects of Confinement and Orientation on the Thermoelectric Power Factor of Silicon Nanowires
- Thermoelectric Band Engineering: The Role of Carrier Scattering
- Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model
Cited by in corpus (4)
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