Pressure induced evolution of band structure in black phosphorus studied by P-NMR
arXiv:1905.05511 · doi:10.1103/PhysRevB.101.161408
Abstract
Two-dimensional layered semiconductor black phosphorus (BP), a promising pressure induced Dirac system as predicted by band structure calculations, has been studied by P-nuclear magnetic resonance. Band calculations have been also carried out to estimate the density of states . The temperature and pressure dependences of nuclear spin lattice relaxation rate in the semiconducting phase are well reproduced using the derived , and the resultant pressure dependence of semiconducting gap is in good accordance with previous reports, giving a good confirmation that the band calculation on BP is fairly reliable. The present analysis of data with the complemental theoretical calculations allows us to extract essential information, such as the pressure dependences of and chemical potential, as well as to decompose observed into intrinsic and extrinsic contributions. An abrupt increase in at 1.63GPa indicates that the semiconducting gap closes, resulting in an enhancement of conductivity.
11 pages, 4 figures