Comment on "If it's pinched it's a memristor" by L. Chua [Semicond. Sci. Technol. 29, 104001 (2014)]

Abstract

In his paper "If it's pinched it's a memristor" [Semicond. Sci. Technol. 29, 104001 (2014)] L. Chua claims to extend the notion of memristor to all two-terminal resistive devices that show a hysteresis loop pinched at the origin. He also states that memcapacitors and meminductors can be defined by a trivial replacement of symbols in the memristor relations, and, therefore, there should be a correspondence between the hysteresis curves of different types of memory elements. This leads the author to the erroneous conclusion that charge-voltage curves of any memcapacitive devices should be pinched at the origin. The purpose of this Comment is to correct the wrong statements in Chua's paper, as well as to highlight some other inconsistencies in his reasoning. We also provide experimental evidence of a memcapacitive device showing non-pinched hysteresis.

References in corpus (7)

• Circuit elements with memory: memristors, memcapacitors and meminductors
• Memory effects in complex materials and nanoscale systems
• Solid-state memcapacitive system with negative and diverging capacitance
• Bistable non-volatile elastic membrane memcapacitor exhibiting chaotic behavior
• A simple test for ideal memristors
• Fundamental Issues and Problems in the Realization of Memristors
• Memresistors and non-memristive zero-crossing hysteresis curves

Cited by in corpus (2)

• An experimental proof that resistance-switching memories are not memristors
• Oscillating electroosmotic flow in channels and capillaries with modulated wall charge distribution