Properties of Coupled Single-Electron Lines

Abstract

Fundamental properties of two electrostatically interacting single-electron lines (SEL) are determined from a minimalistic tight-binding model. The lines are represented by a chain of coupled quantum wells that could be implemented in a mainstream nanoscale CMOS process technology and tuned electrostatically by DC or AC voltage biases. The obtained results show an essential qualitative difference with two capacitively coupled classical electrical lines. The derived equations and their solutions prove that the two coupled SET lines can create an entanglement between electrons. The results indicate a possibility of constructing electrostatic (non-spin) coupled qubits that could be used as building blocks in a CMOS quantum computer.

7 pages, 4 figures

References in corpus (3)

• Quantum Coherence in a One-Electron Semiconductor Charge Qubit
• Quantum Phase Transitions in Josephson Junction Chains
• Quantum phase transition with dissipative frustration

Cited by in corpus (3)

• Towards quantum internet and non-local communication in position based qubits
• Implementation of geometric quantum gates on microwave-driven semiconductor charge qubits
• Analytical Solutions for N-Electron Interacting System Confined in Graph of Coupled Electrostatic Semiconductor and Superconducting Quantum Dots in Tight-Binding Model with Focus on Quantum Information Processing