Temperature scaling of reverse current generated in proton irradiated silicon bulk

Abstract

The value of the scaling parameter $E_{\text{eff}}$ of the temperature dependence for current generated in silicon bulk is investigated for highly irradiated devices. Measurements of devices irradiated to fluences above $1\times 10^{15}{n}_{\text{eq}}{\text{cm}}^{-2}$ have shown a different temperature scaling behaviour than devices irradiated to lower fluences. This paper presents the determination of the parameter $E_{\text{eff}}$ for diodes irradiated with protons up to fluences of $3\times 10^{15}{n}_{\text{eq}}{\text{cm}}^{-2}$ in the bias range from $0$V to $1000$V at temperatures from $-36^{\circ }\text{C}$ to $0^{\circ }\text{C}$ at different stages of annealing. It is shown that $E_{\text{eff}}$ for highly irradiated devices depends on the applied electric field: below depletion voltage, $E_{\text{eff}}$ is observed to have a lower value than above depletion voltage

Prepared for submission to JINST