High-mobility, wet-transferred graphene grown by chemical vapor deposition

Abstract

We report high room-temperature mobility in single layer graphene grown by Chemical Vapor Deposition (CVD) after wet transfer on SiO${}_2$ and hexagonal boron nitride (hBN) encapsulation. By removing contaminations trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to$\sim 70000c{m}^2{V}^{-1}{s}^{-1}$ at room temperature and$\sim 120000c{m}^2{V}^{-1}{s}^{-1}$ at 9K. These are over twice those of previous wet transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room temperature mobilities$\sim 30000c{m}^2{V}^{-1}{s}^{-1}$. These results show that, with appropriate encapsulation and cleaning, room temperature mobilities well above $10000c{m}^2{V}^{-1}{s}^{-1}$ can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach.