Ferroelectric multiple-valued logic units

Abstract

Employing many-valued logic (MVL) data processing allows to dramatically increase the performance of computing circuits. Here we propose to employ ferroelectrics for the material implementation of MVL units basing on their ability to pin the polarization as a sequence of multi-stable states. Two conceptual ideas are considered. As the first system, we suggest using the strained ferroelectric films that can host the polarization states, allowing the effective field-induced multilevel switching between them. As the second one, we propose to employ the ferroelectric nano-samples that confine the topologically protected polarization textures, which may be used as MVL structural elements. We demonstrate that these systems are suitable for engineering of the 3-, 4- and even 5-level logic units and consider the circuit design for such elements.

References in corpus (3)

• Abrupt appearance of the domain pattern and fatigue of thin ferroelectric films
• Polarization vortex domains induced by switching electric field in ferroelectric films with circular electrodes
• Dynamics of Field Induced Polarization Reversal in Strained Perovskite Ferroelectric Films with c-oriented Polarization