Single Electron-Hole Pair Sensitive Silicon Detector with Surface Event Rejection
arXiv:1903.06517 · doi:10.1016/j.nima.2020.163757
Abstract
We demonstrate single electron-hole pair resolution in a single-sided, contact-free 1 cm by 1 mm thick Si crystal operated at 48 mK, with a baseline energy resolution of 3 eV. This crystal can be operated at voltages in excess of V, resulting in a measured charge resolution of 0.06 electron-hole pairs. The high aluminum coverage (70%) of this device allows for the discrimination of surface events and separation of events occurring near the center of the detector from those near the edge. We use this discrimination ability to show that non-quantized dark events seen in previous detectors of a similar design are likely dominated by charge leakage along the side wall of the device.
7 pages, 4 figures, Accepted to NIM A
References in corpus (7)
- First Dark Matter Constraints from a SuperCDMS Single-Charge Sensitive Detector
- Single-electron and single-photon sensitivity with a silicon Skipper CCD
- SENSEI: First Direct-Detection Constraints on sub-GeV Dark Matter from a Surface Run
- Results on MeV-scale dark matter from a gram-scale cryogenic calorimeter operated above ground
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- Improved Modelling of Detector Response Effects in Phonon-based Crystal Detectors used for Dark Matter Searches
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- Low-Energy Calibration of SuperCDMS HVeV Cryogenic Silicon Calorimeters Using Compton Steps
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