Anomalous electronic shot noise in resonant tunneling junctions
arXiv:1902.06312
Abstract
We study the behavior of shot noise in resonant tunneling junctions far from equilibrium. Quantum-coherent elastic charge transport can be characterized by a transmission function, that is the probability for an incoming electron at a given energy to tunnel through a potential barrier. In systems such as quantum point contacts, electronic shot noise is oftentimes calculated based on a constant (energy independent) transmission probability, a good approximation at low temperatures and under a small bias voltage. Here, we generalize these investigations to far from equilibrium settings by evaluating the contributions of electronic resonances to the electronic current noise. Our study extends canonical expressions for the voltage-activated shot noise and the recently discovered delta-T noise to the far from equilibrium regime, when a high bias voltage or a temperature difference is applied. In particular, when the Fermi energy is located on the shoulder of a broad resonance, we arrive at a formula for the shot noise revealing anomalous-nonlinear behavior at high bias voltage.
References in corpus (8)
- Thermodynamic uncertainty relation for biomolecular processes
- Inelastic tunneling effects on noise properties of molecular junctions
- Factorial cumulants reveal interactions in counting statistics
- Full-counting statistics for molecular junctions: Fluctuation theorem and singularities
- Current noise in molecular junctions: effects of the electron-phonon interaction
- Full counting statistics and shot noise of cotunneling in quantum dots and single-molecule transistors
- Shot noise variation within ensembles of gold atomic break junctions at room temperature
- Current noise enhancement: channel mixing and possible nonequilibrium phonon backaction in atomic-scale Au junctions