Modified spin-orbit couplings in uniaxially strained graphene

Abstract

Intrinsic and Rashba spin-orbit interactions in strained graphene is studied within the tight-binding (TB) approach. Dependence of Slater-Koster (SK) parameters of graphene on strain are extracted by fitting the \emph{ab initio} band structure to the TB results. A generalized low-energy effective Hamiltonian in the presence of spin-orbit couplings is proposed for strained graphene subjected to an external perpendicular electric field. Dependence of the modified Rashba strength and other parameters of effective Hamiltonian on the strain and electric field are calculated. In order to analyze the influence of the applied strain on the electronic properties of the graphene, one must take into account the lattice deformation, modifications of the hopping amplitudes and shift of the Dirac points. We find that using the strain it is possible to control the strength of Rashba and intrinsic spin-orbit couplings as well as energy gap at the shifted Dirac points. Meanwhile, the strain slightly modifies the topology of low-energy dispersion around the Dirac points. We describe the SOCs induced energy splitting as a function of strain.

References in corpus (11)

• The electronic properties of graphene
• A tight-binding approach to uniaxial strain in graphene
• Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
• Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
• Spin-orbit gap of graphene: First-principles calculations
• Generation of pure bulk valley current in graphene
• Strained graphene: tight-binding and density functional calculations
• Comment on "Band structure engineering of graphene by strain: First-principles calculations"
• Tuning the pseudospin polarization of graphene by a pseudo-magnetic field
• Electronic properties of graphene and graphene nanoribbons with "pseudo-Rashba" spin-orbit coupling
• Anomalous thermospin effect in the low-buckled Dirac materials