Barut-Girardello coherent states for anisotropic 2D-Dirac materials

Abstract

We construct the Barut-Girardello coherent states for charge carriers in anisotropic 2D-Dirac materials immersed in a constant homogeneous magnetic field which is orthogonal to the sample surface. For that purpose, we solve the anisotropic Dirac equation and identify the appropriate arising and lowering operators. Working in a Landau-like gauge, we explicitly construct nonlinear coherent states as eigenstates of a generalized annihilation operator with complex eigenvalues which depends on an arbitrary function $f$ of the number operator. In order to describe the anisotropy effects on these states, we obtain the Heisenberg uncertainty relation, the probability density, mean energy value and occupation number distribution for three different functions $f$. For the case in which the anisotropy is caused by uniaxial strain, we obtain that when a stress is applied along the $x$-axis of the material surface, the probability density for the nonlinear coherent states is smaller compared to when the material is stressed along the orthogonal axis.

25 pages, 33 figures

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Cited by in corpus (9)

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• Phase-space representation of Landau and electron coherent states for uniaxially strained graphene
• Coherent states in magnetized anisotropic 2D Dirac materials
• Anomalous Floquet tunneling in uniaxially strained graphene
• Schrödinger-type 2D coherent states of magnetized uniaxially strained graphene
• Critical behavior for point monopole and dipole electric impurities in uniformily and uniaxially strained graphene
• Supersymmetric Quantum Potentials Analogs of Classical Electrostatic Fields
• Coherent states for dispersive pseudo-Landau-levels in strained honeycomb lattices
• Multiphoton coherent states for bilayer graphene