Laser-Driven Electron Lensing in Silicon Microstructures

Abstract

We demonstrate a laser-driven, tunable electron lens fabricated in monolithic silicon. The lens consists of an array of silicon pillars pumped symmetrically by two 300 fs, 1.95 $\mu$m wavelength, nJ-class laser pulses from an optical parametric amplifier. The optical near-field of the pillar structure focuses electrons in the plane perpendicular to the pillar axes. With 100 $\pm$ 10 MV/m incident laser fields, the lens focal length is measured to be 50 $\pm$ 4 $\mu$m, which corresponds to an equivalent quadrupole focusing gradient $B^{\prime }$ of 1.4 $\pm$ 0.1 MT/m. By varying the incident laser field strength, the lens can be tuned from a 21 $\pm$ 2 $\mu$m focal length ($B^{\prime }>3.3$ MT/m) to focal lengths on the cm-scale.

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• Beam Dynamics Analysis of Dielectric Laser Acceleration using a Fast 6D Tracking Scheme
• Characterization and Tuning of Ultra High Gradient Permanent Magnet Quadrupoles