Two-dimension Dirac fermions system in CdHgTe quantum wells
arXiv:1901.10307
Abstract
We report on transport and capacitance spectroscopy study of two kinds of quantum wells, namely CdHgTe and CdHgTe with the thicknesses of 7.4 and 11.5 nm, accordingly. The fraction of Cd was chosen in a way that the both quantum wells are expected to have gapless band structure typical for a Dirac fermions system. We have established that the first quantum well exhibits a massless Dirac fermions system with a quality slightly better then in conventional HgTe quantum wells of critical thickness. Second quantum well exhibits a high-quality two-dimensional topological insulator state with the energy gap of around 10 meV and well-defined edge transport making it as a good candidate for further study and applications of topological insulators.
5 pages, 5 figures