Coulomb Blockade from the Shell of an InP-InAs Core-Shell Nanowire with a Triangular Cross Section

Abstract

We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single quantum structures, which show Coulomb blockade effect, over entire lengths of the nanowires. The core-shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown core-shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shell are grown preferentially on specific {1$\bar{1}$00} facets, leading to the formation of the core-shell nanowires with an overall triangular cross section. The grown core-shell nanowires are transferred on to a Si/SiO${}_2$ substrate and then contacted with several narrow metal electrodes. Low-temperature transport measurements show the Coulomb-blockade effect. We analyze the measured gate capacitance and single electron charging energy of the devices and demonstrate that a quantum structure which shows the Coulomb blockade effect of a many-electron quantum dot is formed over the full length of a single core-shell nanowire and consists of the entire InAs shell in the nanowire.

12 pages, 3 figures

References in corpus (3)

• Gate capacitance of back-gated nanowire field-effect transistors
• Aharonov-Bohm oscillations and electron gas transitions in hexagonal core-shell nanowires with an axial magnetic field
• Spin and impurity effects on flux-periodic oscillations in core-shell nanowires

Cited by in corpus (5)

• Computational study of III-V direct-gap semiconductors for thermoradiative cell applications
• Majorana Zero Modes in Nanowires with Combined Triangular and Hexagonal Geometry
• Flux-periodic oscillations in proximitized core-shell nanowires
• Charge and heat currents in prismatic tubular nanowires
• Electron-hole coherence in core-shell nanowires with partial proximity induced superconductivity