S-type Negative Differential Resistance in Semiconducting Transition-Metal Dichalcogenides

Abstract

Current-controlled (also known as "S-type") negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental realization of S-type NDR based on conventional mechanisms poses demanding requirements on materials, which greatly limits their potential applications. Here, we experimentally identify that semiconducting transition metal dichalcogenides (TMDs) can host a bipolar S-type NDR devices. Theoretical simulations indicate that the origin of the NDR in these devices arises from a thermal feedback mechanism. Furthermore, we demonstrate the potential applications of TMDs based S-type NDR device in signal processing and neuromorphic electronics.

arXiv commentTo be appear in Advanced Electronic Materials, 9 pages 4 figures

References in corpus (1)

• Current-Controlled Negative Differential Resistance due to Joule Heating in TiO2

Cited by in corpus (3)

• Two-dimensional layered materials for memristive and neuromorphic applications
• Origin of current-controlled negative differential resistance modes and the emergence of composite characteristics with high complexity
• Astability versus Bistability in van der Waals Tunnel Diode for Voltage Controlled Oscillator and Memory Applications