Moiré quantum well states in tiny angle two dimensional semi-conductors

Abstract

The valence band edge in tiny angle twist bilayers of MoS${}_2$ and phosphorene is shown to consist of highly localized energy levels created by a `moiré quantum well', i.e. trapped by the interlayer moiré potential. These approximately uniformly spaced energy levels exhibit a richly modulated charge density, becoming ultra-localized at the valence band maximum. The number and spacing of such levels is controllable by the twist angle and interlayer interaction strength, suggesting the possibility of `moiré engineering' ordered arrays of quantum dots in 2d twist semi-conductors.

Cited by in corpus (5)

• Effective Floquet Hamiltonians for periodically-driven twisted bilayer graphene
• Floquet engineering of interlayer couplings: Tuning the magic angle of twisted bilayer graphene at the exit of a waveguide
• Floquet-engineering topological transitions in a twisted transition metal dichalcogenide homobilayer
• Interaction effects and superconductivity signatures in twisted double-bilayer WSe${}_2$
• Tunneling in an anisotropic cubic Dirac semi-metal