Importance sampling for thermally induced switching and non-switching probabilities in spin-torque magnetic nanodevices
arXiv:1901.03890 · doi:10.1109/TMAG.2019.2914993
Abstract
Spin-transfer torque magnetoresistive random access memory is a potentially transformative technology in the non-volatile memory market. Its viability depends, in part, on one's ability to predictably induce or prevent switching; however, thermal fluctuations cause small but important errors in both the writing and reading processes. Computing these very small probabilities for magnetic nanodevices using naive Monte Carlo simulations is essentially impossible due to their slow statistical convergence, but variance reduction techniques can offer an effective way to improve their efficiency. Here, we provide an illustration of how importance sampling can be efficiently used to estimate low read and write soft error rates of macrospin and coupled-spin systems.
arXiv comment11 pages, 14 figures
References in corpus (11)
- Switching Distributions for Perpendicular Spin-Torque Devices within the Macrospin Approximation
- An Introduction to Stochastic PDEs
- Importance Sampling for Multiscale Diffusions
- Thermally assisted spin transfer torque switching in synthetic free layers
- Metastability in Interacting Nonlinear Stochastic Differential Equations I: From Weak Coupling to Synchronisation
- Numerical Fokker-Planck study of stochastic write error slope in spin torque switching
- Write error rate of spin-transfer-torque random access memory including micromagnetic effects using rare event enhancement
- Averaged equation for energy diffusion on a graph reveals bifurcation diagram and thermally assisted reversal times in spin-torque driven nanomagnets
- From materials to systems: a multiscale analysis of nanomagnetic switching
- Spin-Transfer Torque Magnetization Reversal in Uniaxial Nanomagnets with Thermal Noise
- A reduced model for precessional switching of thin-film nanomagnets under the influence of spin-torque