Anisotropic magnetic entropy change in Cr$_2$X$_2$Te$_6$ (X = Si and Ge)

Yu Liu; C. Petrovic

doi:10.1103/PhysRevMaterials.3.014001

paper

Anisotropic magnetic entropy change in Cr $_{2}$ X $_{2}$ Te $_{6}$ (X = Si and Ge)

arXiv:1901.02876 · doi:10.1103/PhysRevMaterials.3.014001

Abstract

Intrinsic, two-dimensional (2D) ferromagnetic semiconductors are an important class of materials for spintronics applications. Cr $_{2}$ X $_{2}$ Te $_{6}$ (X = Si and Ge) semiconductors show 2D Ising-like ferromagnetism, which is preserved in few-layer devices. The maximum magnetic entropy change associated with the critical properties around the ferromagnetic transition for Cr $_{2}$ Si $_{2}$ Te $_{6}$ $- Δ S_{M}^{ma x} \sim$ 5.05 J kg $^{- 1}$ K $^{- 1}$ is much larger than $- Δ S_{M}^{ma x} \sim$ 2.64 J kg $^{- 1}$ K $^{- 1}$ for Cr $_{2}$ Ge $_{2}$ Te $_{6}$ with an out-of-plane field change of 5 T. The rescaled $- Δ S_{M} (T, H)$ curves collapse onto a universal curve independent of temperature and field for both materials. This indicates similar critical behavior and 2D Ising magnetism, confirming the magnetocrystalline anisotropy that could preserve the long-range ferromagnetism in few-layers of Cr $_{2}$ X $_{2}$ Te $_{6}$ .

References in corpus (1)

Tricritical behavior of two-dimensional intrinsic ferromagnetic semiconducting CrGeTe3

Anisotropic magnetic entropy change in Cr2​X2​Te6​ (X = Si and Ge)

Abstract

References in corpus (1)

Cited by in corpus (10)

Anisotropic magnetic entropy change in Cr $_{2}$ X $_{2}$ Te $_{6}$ (X = Si and Ge)