Novel method to study strain effect of thin films using a piezoelectric-based device and a flexible metallic substrate

Abstract

For applying tensile or compressive uniaxial strain to functional thin films, we propose a novel approach in combining a piezoelectric-based device and a technical metallic substrate used widely in the 2nd generation coated conductors (i.e. superconducting tapes). A strain-induced shift of the superconducting transition temperature of 0.1 K for Co-doped BaFe2As2 was observed along [100] direction, corresponding to a uniaxial pressure derivative dTc/dp100=-4 K/GPa. For Mn3CuN, a uniaxial strain derivative along [100] direction of the Curie temperature dTC/de100=13 K/% was observed. The current approach is applicable to various functional thin films in a wide range of temperatures.

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References in corpus (10)

• Influence of strain on magnetization and magnetoelectric effect in La0.7A0.3MnO3 / PMN-PT(001) (A = Sr; Ca)
• Piezoelectric-based apparatus for strain tuning
• Suppression of phase separation and giant enhancement of superconducting transition temperature in FeSe${}_{1-x}$Te${}_x$ thin films
• Strain induced superconductivity in the parent compound BaFe2As2
• In-situ growth of superconducting NdFeAs(O,F) thin films by Molecular Beam Epitaxy
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• Hall-plot of the phase diagram for Ba(Fe1-xCox)2As2
• Reversible shift in the superconducting transition for La1.85Sr0.15CuO4 and BaFe1.8Co0.2As2 using piezoelectric substrates
• Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films

Cited by in corpus (1)

• Giant electrophononic response in PbTiO${}_3$ by strain engineering