Ternary mixed-anion semiconductors with tunable band gaps from machine-learning and crystal structure prediction
arXiv:1812.02708 · doi:10.1103/PhysRevMaterials.3.035404
Abstract
We report the computational investigation of a series of ternary XYZ and XYZ compounds with X={Mg, Ca, Sr, Ba}, Y={P, As, Sb, Bi}, and Z={S, Se, Te}. The compositions for these materials were predicted through a search guided by machine learning, while the structures were resolved using the minima hopping crystal structure prediction method. Based on calculations, we predict that many of these compounds are thermodynamically stable. In particular, 21 of the XYZ compounds crystallize in a tetragonal structure with symmetry, and exhibit band gaps in the range of 0.3 and 1.8 eV, well suited for various energy applications. We show that several candidate compounds (in particular XYTe and XSbSe) exhibit good photo absorption in the visible range, while others (e.g., BaSbSe) show excellent thermoelectric performance due to a high power factor and extremely low lattice thermal conductivities.
References in corpus (21)
- BoltzTraP. A code for calculating band-structure dependent quantities
- A General-Purpose Machine Learning Framework for Predicting Properties of Inorganic Materials
- Big Data of Materials Science - Critical Role of the Descriptor
- Universal Fragment Descriptors for Predicting Electronic Properties of Inorganic Crystals
- Predicting Band Gaps with Hybrid Density Functionals
- Machine learning modeling of superconducting critical temperature
- Machine Learning Energies of 2 M Elpasolite (ABCD) Crystals
- Lattice anharmonicity and thermal conductivity from compressive sensing of first-principles calculations
- Machine learning with systematic density-functional theory calculations: Application to melting temperatures of single and binary component solids
- Crystal structure prediction using the Minima Hopping method
- Physical descriptor for the Gibbs energy of inorganic crystalline solids and temperature-dependent materials chemistry
- Ultralow Thermal Conductivity in Full-Heusler Semiconductors
- Low-Dimensional Transport and Large Thermoelectric Power Factors in Bulk Semiconductors by Band Engineering of Highly Directional Electronic States
- Accelerated materials property predictions and design using motif-based fingerprints
- High pressure structures of disilane and their superconducting properties
- The crystal structure of cold compressed graphite
- A Bell-Evans-Polanyi principle for molecular dynamics trajectories and its implications for global optimization
- Efficient moves for global geometry optimization methods and their application to binary systems
- Matrix- and tensor-based recommender systems for the discovery of currently unknown inorganic compounds
- Thermodynamic stability of alkali metal/zinc double-cation borohydrides at low temperatures
- Exploring the high-pressure materials genome