Quantum Oscillations in iron-doped topological insulator Sb2Te3 crystals

Abstract

We investigated the magnetotransport properties of Fe-doped topological insulator Sb1.96 Fe0.04Te3 single crystals. With doping, the band structure changes significantly and multiple Fermi pockets become evident in the Shubnikov-de Haas oscillations, in contrast to the single frequency detected for pure Sb2Te3. Using complementary density functional theory calculations, we identify an additional bulk hole pocket introduced at the Γ point which originates from the chemical distortion associated with the Fe-dopant. Experimentally, both doped and undoped samples are hole-carrier dominated, however, Fe doping also reduces the carrier density and mobility. The angle dependent quantum oscillations were analyzed to characterize the complex Fermi surface and isolate the dimensionality of each SdH feature. Among the components, at least two pockets possess 2D-like behavior according to their rotational dependence. These results indicate a complex interplay of hybridized dopant bands with the bulk and surface topological electronic structure.

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Cited by in corpus (9)

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• Massive Dirac Fermions and Strong Shubnikov-de Haas Oscillations in Topological Insulator Sm,Fe:Bi2Se3 Single Crystals
• Weak antilocalization and Shubnikov-de Haas oscillations in CaCuSb single crystal
• Magnetotransport and Berry phase Tuning in Gd-doped Bi2Se3 Topological Insulator Single Crystals
• Antiferromagnetic topological insulating state in Tb${}_{0.02}$Bi${}_{1.08}$Sb${}_{0.9}$Te${}_2$S single crystals
• Carrier Density and Thickness Dependent Proximity Effect in Doped Topological Insulator -- Metallic Ferromagnet Bilayers
• Coexistence of Logarithmic and SdH Quantum Oscillations in Ferromagnetic Cr-doped Tellurium Single Crystals
• Modulation of crystal and electronic structures in topological insulators by rare-earth doping