Bi-Arrhenius diffusion and surface trapping of Li in rutile TiO
arXiv:1810.12537 · doi:10.1103/PhysRevLett.123.095901
Abstract
We report measurements of the diffusion rate of isolated ion-implanted Li within 120 nm of the surface of oriented single-crystal rutile TiO using a radiotracer technique. The -particles from the Li decay provide a sensitive monitor of the distance from the surface and how the depth profile of Li evolves with time. The main findings are that the implanted Li diffuses and traps at the (001) surface. The T-dependence of the diffusivity is described by a bi-Arrhenius expression with activation energies of 0.3341(21) eV above 200 K, whereas at lower temperatures it has a much smaller barrier of 0.0313(15) eV. We consider possible origins for the surface trapping, as well the nature of the low-T barrier.
5 pages, 4 figures