Coulomb pairing of electrons in thin films with strong spin-orbit interaction
arXiv:1810.05144 · doi:10.1016/j.physe.2018.12.028
Abstract
In low-dimensional structures with strong Rashba spin-orbit interaction (SOI), the Coulomb fields between moving electrons produce a SOI component of the pair interaction that competes with the potential Coulomb repulsion. If the Rashba SOI constant of the material is sufficiently high, the total electron-electron interaction becomes attractive, which leads to the formation of the two-electron bound states. We show that because of the dielectric screening in a thin film the binding energy is significantly higher as compared to the case of the bulk screening.
arXiv comment4 pages, 2 figures; a couple of references added in v2
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- Pair spin-orbit interaction in low-dimensional electron systems
- Electron correlations due to pair spin-orbit interaction in 2D electron systems
- Spin-dependent electron-electron interaction in Rashba materials
- Electron pairs bound by the spin-orbit interaction in 2D gated Rashba materials with two-band spectrum
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- Bound electron pairs formed by the spin-orbit interaction in 2D gated structures