Magnetotransport in phase-separated (Ga,Fe)N with '-GaFeN nanocrystals
arXiv:1809.08894 · doi:10.1103/PhysRevB.99.085201
Abstract
The magnetotransport in phase-separated (Ga,Fe)N containing '-GaFeN (0\,\,y\,1) nanocrystals (NCs) is studied in the temperature range between 2\,K and 300\,K. The evolution of the resistivity and of the magnetoresistance (MR) as a function of temperature points at two conduction mechanisms: namely a conventional Arrhenius-type one down to 50\,K, and Mott variable range hopping at lower temperatures, where the spin-polarized current is transported between NCs in a regime in which phonon-scattering effects are not dominant. Below 25\,K, the MR shows a hysteretic contribution at magnetic fields 1\,T and proportional to the coercive field. Anisotropic magnetoresistance with values one order of magnitude greater than those previously reported for '-FeN thin films over the whole considered temperature range, confirms that the observed MR in these layers is determined by the embedded nanocrystals.
10 pages, 8 figures