Localization properties of vibrational modes in $a$-Si3N4

Abstract

We present a first-principles investigation of the localization properties of vibrational modes in amorphous silicon nitride ($a$-Si${}_3$N${}_4$). Our investigation further confirms that the vibrational modes underlying the peak at $\sim$471 cm${}^{-1}$ in the infrared spectrum of silicon nitride mainly consist of nitrogen motion in the direction normal to the plane defined by the three Si nearest neighbors. In-plane stretching of N--Si bonds becomes largely dominant above $\sim$700 cm${}^{-1}$. In particular vibrational modes underlying the infrared peak at 825 cm${}^{-1}$ arise from the N--Si bond stretching motions. If N--N homopolar bonds were present, we show that N--N bond stretching occurs above $\sim$1100 cm${}^{-1}$. Furthermore, we investigate the localization properties of vibrational modes by calculating their inverse participation ratio (IPR) and phase quotient. From this analysis we infer that modes above 600 cm${}^{-1}$ shows a progressive increase of the localization degree and optic-like behavior, especially above 1000 cm${}^{-1}$. At about 650 cm${}^{-1}$, given the considerable IPR value, and on the basis of projectional analysis on silicon-breathing-like motions of the NSi${}_3$ units, we suggest that vibrational modes may involve correlated motions of neighboring SiN${}_4$ tetrahedra.

11 pages, 5 figures