Breakdown of the static approximation for free carrier screening of excitons in monolayer semiconductors

Abstract

We address the problem of free carrier screening of exciton states in two-dimensional monolayer semiconductors. Basic theoretical considerations are presented concerning the applicability of the commonly used static approximation of the screening effect and the implications are discussed. We show that the low-frequency models lead to a major overestimation of the free carrier response and are inadequate to describe the screening of strongly bound excitons in monolayer materials. The presented arguments are consistent with existing high-level many-body theories and transparently illustrate the underlying physics.

References in corpus (7)

• Excitons in atomically thin transition metal dichalcogenides
• Fermi polaron-polaritons in charge-tunable atomically thin semiconductors
• Screening and Many-Body Effects in Two-Dimensional Crystals: Monolayer MoS${}_2$
• Charged excitons in monolayer WSe${}_2$: experiment and theory
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• Doping-induced non-Markovian interference causes excitonic linewidth broadening in monolayer WSe${}_2$
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