Electric Field Driven Memristive Behavior at the Schottky Interface of Nb doped SrTiO3

Abstract

Computing inspired by the human brain requires a massive parallel architecture of low-power consuming elements of which the internal state can be changed. SrTiO3 is a complex oxide that offers rich electronic properties; here Schottky contacts on Nb-doped SrTiO3 are demonstrated as memristive elements for neuromorphic computing. The electric field at the Schottky interface alters the conductivity of these devices in an analog fashion, which is important for mimicking synaptic plasticity. Promising power consumption and endurance characteristics are observed. The resistance states are shown to emulate the forgetting process of the brain. A charge trapping model is proposed to explain the switching behavior.

arXiv comment7 pages, accepted in JAP New physics and materials for neuromorphic computation

References in corpus (7)

• Memory and information processing in neuromorphic systems
• Tunable Rashba spin-orbit interaction at oxide interfaces
• Anisotropic magneto-transport effects at SrTiO3\LaAlO3 interfaces
• Nanoscale Phenomena in Oxide Heterostructures
• Temperature Dependent Polarity Reversal in Au/Nb:SrTiO3 Schottky Junctions
• Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique
• Electric field control of spin lifetimes in Nb-SrTiO${}_3$ by spin-orbit fields

Cited by in corpus (3)

• Learning to Approximate Functions Using Nb-doped SrTiO${}_3$ Memristors
• Multi-mem behavior at reduced voltages in La${}_{1/2}$Sr${}_{1/2}$Mn${}_{1/2}$Co${}_{1/2}$O${}_{3-x}$ perovskite modified with Sm:CeO${}_2$
• Synaptic plasticity in Co/Nb:STO memristive devices: The role of oxygen vacancies