Slingshot non-sequential double ionization as a gate to anti-correlated two electron escape

Abstract

At intensities below-the-recollision threshold, we show that re-collision-induced excitation with one electron escaping fast after re-collision and the other electron escaping with a time delay via a Coulomb slingshot motion is one of the most important mechanisms of non-sequential double ionization, for strongly-driven He at 400 nm. Slingshot-NSDI is a general mechanism present for a wide range of low intensities and pulse durations. Anti-correlated two-electron escape is its striking hallmark. This mechanism offers an alternative explanation of anti-correlated two-electron escape obtained in previous studies.

6 pages, 3 figures