On the Nature of Localization in Ti doped Si

Abstract

Intermediate band semiconductors hold the promise to significantly improve the efficiency of solar cells, but only if the intermediate impurity band is metallic. We apply a recently developed first principles method to investigate the origin of electron localization in Ti doped Si, a promising candidate for intermediate band solar cells. Although Anderson localization is often overlooked in the context of intermediate band solar cells, our results show that in Ti doped Si it plays a more important role in the metal insulator transition than Mott localization. Implications for the theory of intermediate band solar cells are discussed.

arXiv comment5 pages, 3 figures for the main text. 8 pages, 11 figures for the supplementary material

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Cited by in corpus (5)

• Multifractality of ab initio wave functions in doped semiconductors
• Ab initio typical medium theory of substitutional disorder
• Locally self-consistent embedding approach for disordered electronic systems
• Anderson localization: a density matrix approach
• Electronic correlations and Fermi liquid behavior of intermediate-band states in titanium-doped silicon