Theory of the inverse spin galvanic effect in quantum wells
arXiv:1804.03607 · doi:10.1103/PhysRevB.97.235412
Abstract
The understanding of the fundamentals of spin and charge densities and currents interconversion by spin-orbit coupling can enable efficient applications beyond the possibilities offered by conventional electronics. For this purpose we consider various forms of the frequency-dependent inverse spin galvanic effect (ISGE) in semiconductor quantum wells and epilayers taking into account the cubic in the electron momentum spin-orbit coupling in the Rashba and Dresselhaus forms, concentrating on the current-induced spin polarization (CISP). We find that including the cubic terms qualitatively explains recent findings of the CISP in InGaAs epilayers being the strongest if the internal spin-orbit coupling field is the smallest and vice versa (Norman et . 2014, Luengo et al. 2017), in contrast to the common understanding. Our results provide a promising framework for the control of spin transport in future spintronics devices.
arXiv comment13 pages, 12 figures
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Cited by in corpus (8)
- Magnon-Plasmon Hybridization Mediated by Spin-Orbit Interaction in Magnetic Materials
- Theory of inverse Rashba-Edelstein effect induced by spin pumping into a two-dimensional electron gas
- Theory of the inverse Rashba-Edelstein effect induced by thermal spin injection
- Current-induced spin polarisation in Rashba-Dresselhaus systems under different point groups
- Tunneling anisotropic spin galvanic effect
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- Promoted current-induced spin polarization in inversion symmetry broken topological insulator thin films
- Boltzmann theory of the inverse Edelstein effect in a two-dimensional Rashba gas