Tunable spin dependent transport in the dor-ring nanostructure

Abstract

We study spin-dependent transport through a quantum nanostructure composed of a quantum dot (QD) surrounded by a quantum nanoring. The nanostructure is side-attached to source and drain electrodes and we assume that the confining potential that forms the nanostructure can be controlled by electrical gating. We demonstrate that depending on the model parameters the system can exhibit positive as well as negative differential conductance (NDC). What is more interesting, these properties can be easily controlled by tuning the applied gate voltage.

12 pages, 10 figures

References in corpus (4)

• All-wurtzite (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy
• Wave function engineering in quantum dot-ring nanostructures
• Dot-ring nanostructure: Rigorous analysis of many-electron effects
• Charge transport through a semiconductor quantum dot-ring nanostructure